Great Efficiency and Durability 3L TO-220AB SiC Diode

Short Description:

Packaging Structure: 3L TO-220AB

Introduction: YUNYI 3L TO-220AB SiC Diode is made from silicon carbide materials. SiC diodes have high thermal conductivity, which can effectively improve power density. The higher the thermal conductivity, the stronger the ability of the material to transfer heat to the environment, the smaller the temperature rise of the device, the more conducive to improving the power density of the power device, so it is more suitable for working in a high temperature environment. The high breakdown field strength of SiC diodes increases the withstand voltage and reduces the size, and the high electronic breakdown field strength increases the breakdown voltage of semiconductor power devices. At the same time, due to the increase of the electron breakdown field strength, in the case of increasing the impurity penetration density, the broadband of the drift region of the SiC diode power device can be reduced, so that the size of the power device can be reduced.

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Advantages of YUNYI's 3L TO-220AB SiC Diode:

1. Competitive cost with high-level quality

2. High production efficiency with short lead time

3. Small size, helping to optimize the circuit board space

4. Endurable under various natural environments

5. Self-developed low-loss chip

Steps of Chip Production:

1. Mechanically Printing（Super-precise automatic wafer printing）

2. Automatic First-etching （Automatic Etching Equipment，CPK>1.67）

3. Automatic Polarity Test（Precise Polarity Test）

4. Automatic Assembly （Self-developed Automatic Precise Assembly）

5. Soldering (Protection with Mixture of Nitrogen & Hydrogen Vacuum Soldering )

6. Automatic Second-etching (Automatic Second-etching with Ultra-pure Water)

7. Automatic Gluing (Uniform Gluing & Precise Calculation are Realized by Automatic Precise Gluing Equipment)

8. Automatic Thermal Test (Automatic Selection by Thermal Tester)

9. Automatic Test(Multifunctional Tester)

Parameters of products:

Part Number	Package	VRWM V	IO A	IFZM? A	IR μa	V_F V
ZICRF10650CT	ITO-220AB	650	10	60	60	1.7
ZICRF5650	ITO-220AC	650	5	60	60	2
ZICRF6650	ITO-220AC	650	6	60	50	2
Z3D06065F	ITO-220AC	650	6	70	3(0.03 typical)	1.7(1.5 typical)
ZICRF10650	ITO-220AC	650	10	100	120	1.7
ZICRF101200	ITO-220AC	1200	10	110	100	1.8
ZICRF12600	ITO-220AC	600	12	50	150	1.7
ZICRF12650	ITO-220AC	650	12	50	150	1.7
Z3D03065F	ITO-220AC	650	3	46	2(0.03 typical)	1.7(1.4 typical)
Z3D10065F	ITO-220AC	650	10	115	40(0.7 typical)	1.7(1.45 typical)
Z4D10120F	ITO-220AC	1200	10	105	200(30 typical)	1.8(1.5 typical)
ZICR10650CT	TO-220AB	650	10	60	60	1.7
Z3D20065C	TO-220AB	650	20	115(per leg)	40(0.7 typical)(per leg)	1.7(1.45 typical)(per leg)
ZICR5650	TO-220AC	650	5	60	60	2
ZICR6650	TO-220AC	650	6	60	50	2
Z3D06065A	TO-220AC	650	6	70	3(0.03 typical)	1.7(1.5 typical)
Z3D10065A	TO-220AC	650	10	115	40(0.7 typical)	1.7(1.45 typical)
ZICR10650	TO-220AC	650	10	110	100	1.7
Z3D20065A	TO-220AC	650	20	170	50(1.5 typical)	1.7(1.45 typical)
ZICR101200	TO-220AC	1200	10	110	100	1.8
ZICR12600	TO-220AC	600	12	50	150	1.7
ZICR12650	TO-220AC	650	12	50	150	1.7
Z3D03065A	TO-220AC	650	3	46	2(0.03 typical)	1.7(1.4 typical)
Z4D04120A	TO-220AC	1200	4	46	200(20 typical)	1.8(1.5 typical)
Z4D05120A	TO-220AC	1200	5	46	200(20 typical)	1.8(1.65 typical)
Z4D02120A	TO-220AC	1200	2	44	50(10 typical)	1.8(1.5 typical)
Z4D10120A	TO-220AC	1200	10	105	200(30 typical)	1.8(1.5 typical)
Z4D20120A	TO-220AC	1200	20	162	200(35 typical)	1.8(1.5 typical)
Z4D08120A	TO-220AC	1200	8	64	200(35 typical)	1.8(1.6 typical)
Z4D15120A	TO-220AC	1200	15	100	200(35 typical)	1.8(1.5 typical)
Z3D15065A	TO-220AC	650	15	162	25(0.5 typical)	1.7(1.5 typical)
Z3D06065I	TO-220-IZolation	650	6	70	3(0.03 typical)	1.7(1.5 typical)
Z3D10065I	TO-220-IZolation	650	10	115	40(0.7 typical)	1.7(1.45 typical)